60V N-Channel Enhancement Mode MOSFET

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

60

68

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=60V,VGS=0V

-

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±10V,VDS=0V

-

±100

±500

nA

VGS=±20V,VDS=0V

-

±4

±10

uA

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

0.7

1.2

1.9

V

Drain-Source On-State Resistance

RDS(ON)

VGS=5V, ID=0.4A

-

1.3

3

Ω

VGS=10V, ID=0.5A

-

1

2

Ω

Forward Transconductance

gFS

VDS=10V,ID=0.2A

0.1

-

-

S

Input Capacitance

Clss

VDS=25V,VGS=0V,

F=1.0MHz

-

21

50

PF

Output Capacitance

Coss

-

11

25

PF

Reverse Transfer Capacitance

Crss

-

4.2

5

PF

Turn-on Delay Time

td(on)

VDD=30V,ID=0.2A

VGS=10V,RGEN=10Ω

-

10

-

nS

Turn-on Rise Time

tr

-

50

-

nS

Turn-Off Delay Time

td(off)

-

17

-

nS

Turn-Off Fall Time

tf

-

10

-

nS

Total Gate Charge

Qg

VDS=10V,ID=0.3A,

VGS=4.5V

-

1.7

3

nC

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=0.2A

-

-

1.2

V

Diode Forward Current (Note 2)

IS

-

-

0.3

A

Notes:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production

AP2N7002AI

AP2N7002AI Rve3.8

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