AP2N65MSI datasheet(1/7 Pages) APME

No. de pieza	AP2N65MSI

Descripción Electrónicos	650V N-Channel Enhancement Mode MOSFET

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Fabricante Electrónico	APME [A POWER MICROELECTRONICS]

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AP2N65MSI

650V N-Channel Enhancement Mode MOSFET

AP2N65MSI REV1.0

永源微電子科技有限公司

Description

The AP2N65MSI-H is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS = 650V ID =2.0A

RDS(ON) < 6.0Ω @ VGS=10V （Type：4.5Ω）

Application

LED

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP2N65MSI

SOT223-3L

AP2N65MSI XXX YYYY

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Value

Unit

VDSS

Drain-Source Voltage (VGS = 0V)

650

V

ID

Continuous Drain Current

2.0

A

IDM

Pulsed Drain Current

(note1)

1.0

A

VGS

Gate-Source Voltage

±30

V

EAS

Single Pulse Avalanche Energy (note2)

50

mJ

PD

Power Dissipation (TC = 25ºC)

25

W

TJ, Tstg

Operating Junction and Storage Temperature Range

-55~+150

ºC

RthJC

Thermal Resistance, Junction-to-Case

4

ºC/W

RthJA

Thermal Resistance, Junction-to-Ambient

125

ºC/W

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AP2N65MSI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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