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AP4P15DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

No. de pieza AP4P15DF
Descripción Electrónicos  -150V P-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrónico  APME [A POWER MICROELECTRONICS]
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AP4P15DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP4P15DF
-150V P-Channel Enhancement Mode MOSFET
AP4P15DF RVE1.0
永源微電子科技有限公司
Description
The AP4P15DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = -150V ID =-4A
RDS(ON) < 780mΩ @ VGS=10V (Type：620mΩ)
Application
Brushless motor
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP4P15DF
PDFN3*3-8L
AP4P15DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-150
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25
℃
Continuous Drain Current, -VGS @ -10V1
-4.0
A
ID@TA=70
℃
Continuous Drain Current, -VGS @ -10V1
-2.8
A
IDM
Pulsed Drain Current2
-12
A
EAS
Single Pulse Avalanche Energy3
56.5
mJ
IAS
Avalanche Current
5
A
PD@TA=25
℃
Total Power Dissipation4
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
℃
/W
RθJC
Thermal Resistance Junction-Case1
40
℃
/W


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