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AT25DF011 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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AT25DF011 Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 50 page  Datasheet DS-AT25DF011-032 Rev. J Page 1 2023-11-14 © 2023 Renesas Electronics Features • Single 1.65 V - 3.6 V Supply • Serial Peripheral Interface (SPI) Compatible • Supports SPI Modes 0 and 3 • Supports Dual Output Read • 104 MHz Maximum Operating Frequency • Clock-to-Output (tV) of 6 ns • Flexible, Optimized Erase Architecture for Code + Data Storage Applications • Small (256-Byte) Page Erase • Uniform 4-kByte Block Erase • Uniform 32-kByte Block Erase • Full Chip Erase • Hardware Controlled Locking of Protected Sectors via WP Pin • 128-byte, One-Time Programmable (OTP) Security Register • 64 bytes factory programmed with a unique identifier • 64 bytes user programmable • Flexible Programming • Byte/Page Program (1 to 256 Bytes) • Fast Program and Erase Times • 1.5 ms Typical Page Program (256 Bytes) Time • 50 ms Typical 4-kByte Block Erase Time • 350 ms Typical 32-kByte Block Erase Time • Automatic Checking and Reporting of Erase/Program Failures • Software Controlled Reset • JEDEC Standard Manufacturer and Device ID Read Methodology • Low Power Dissipation • 200 nA Ultra-Deep Power-Down current (Typical) • 5 µA Deep Power-Down Current (Typical) • 25 µA Standby current (Typical) • 4.5 mA Active Read Current (Typical) • Endurance: • 100,000 Program/Erase Cycles (-40 °C to +85 °C) • 20,000 Program/Erase Cycles (-40 °C to +125 °C) • Data Retention: 20 Years • Temperature Range: -40 °C to +85 °C (1.65 V to 3.6 V), -40 °C to +125 °C (1.7 V to 3.6 V) • Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options • 8-lead SOIC (150-mil) • 8-pad Ultra Thin DFN (2 x 3 x 0.6 mm) • 8-lead TSSOP Package AT25DF011 1-Mbit, 1.65 V Minimum SPI Serial Flash Memory with Dual-Read Support |
Número de pieza similar - AT25DF011 |
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Descripción similar - AT25DF011 |
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