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H4RN10FP Datasheet(PDF) 4 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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H4RN10FP Datasheet(HTML) 4 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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4 / 5 page ![]() ( ) Source-drain voltage -V V S D 0.5 1.0 1.5 2.0 - 1 10 0 10 1 10 2 10 3 10 Fig.7 Forward characteristic of body diode 0 T =150 °C J T =25 °C J -25 Fig.8 Drain Current vs. Case Temperature 75 125 175 ( ) Case Temperature-T °C C 150 100 50 25 0 -50 180 0 40 80 120 160 20 60 100 140 160 T ﹤175 °C J 200 1 Fig.9 Safe Operating Area ( ) Drain-Source Voltage-V V D S 1E3 1E2 1E1 1E0 0.1 10 100 200 0.01ms 0.1ms 1ms 10ms 100ms DC T =25 °C C T =175 °C J m a x R Limited D S ( o n ) Pulse Width-t (sec) Fig10. Typical Characteristics 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E-3 1E-2 Duty=0.5 Single Notes: 1. Duty Factor D=t /t 1 2 2. Peak T =P Z T J D M t h J C C × + t2 t1 PDM 1E-6 1E0 1E-1 0.2 0.1 0.05 0.02 www.hxkj.hk +86-769-23622090 huixin@hxkj.hk Rev.02 Page 4 of 5 |
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