IRF830 datasheet(1/8 Pages) STMICROELECTRONICS

No. de pieza	IRF830

Descripción Electrónicos	N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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IRF830

N - CHANNEL 500V - 1.35

Ω - 4.5A - TO-220

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 1.35

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY

™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

®

INTERNAL SCHEMATIC DIAGRAM

August 1998

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VDS

Drain-source Volt age (VGS =0)

500

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

500

V

VGS

Gat e-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

o C4.5

A

ID

Drain Current (continuous) at Tc =100

oC2.9

A

IDM(

•)

Drain Current (pulsed)

18

A

Ptot

Tot al Dissipation at Tc =25

oC100

W

Derating F act or

0.8

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

3.5

V/ ns

Tstg

Storage T emperat ure

-65 to 150

oC

Tj

Max. O perating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤ 4.5A, di/dt ≤ 75 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet

TYPE

VDSS

RDS(on)

ID

IRF830

500 V

< 1.5

Ω

4.5 A

1

2

3

TO-220

1/8

Número de pieza similar - IRF830

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