IRF740 datasheet(3/8 Pages) STMICROELECTRONICS

No. de pieza	IRF740

Descripción Electrónicos	N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET

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3 / 8 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

td(on)

tr

Turn-on Time

Rise Time

VDD = 200 V

ID =5 A

RG =4.7

Ω

VGS =10 V

(see test circuit, figure 3)

17

10

ns

Qg

Q gs

Qgd

Tot al Gate Charge

Gat e-Source Charge

Gat e-Drain Charge

VDD = 320 V

ID = 10.7 A VGS =10V

35

11

12

43

nC

SWITCHING OFF

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

tr(Voff)

tf

tc

Off -volt age Rise Time

Fall Time

Cross-over Time

VDD = 320 V

ID =10 A

RG =4.7

Ω VGS =10 V

(see test circuit, figure 5)

10

17

ns

SOURCE DRAIN DIODE

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

ISD

ISDM (

•)

Source-drain Current

(pulsed)

10

40

A

VSD (

∗)

Forward On Volt age

ISD =10 A

VGS =0

1. 6

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD =10 A

di/dt = 100 A/

µs

VDD = 100 V

Tj =150

oC

(see test circuit, figure 5)

370

3.2

17

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Area

Thermal Impedance

IRF740

3/8

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