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LM35 Datasheet(PDF) 6 Page - Texas Instruments |
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LM35 Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 33 page ![]() 6.5 Electrical Characteristics: LM50 (LM50B and LM50C) LM50: +VS = 5V (DC) and ILOAD = 0.5µA, TA = TJ = 25°C (unless otherwise noted)(1) LM50B (Legacy chip only): TA = TMIN to TMAX = -25°C to 100°C LM50B (New chip) and LM50C (Both New and Legacy chip): TA = TMIN to TMAX = -40°C to 125°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SENSOR ACCURACY TACY Temperature accuracy(2) TA = 25°C LM50B (Legacy chip) -2 2 °C TA = TMAX = 100°C -3 3 TA = TMIN = -25°C -3.5 3 TA = 25°C LM50B (New chip) -2 2 °C TA = TMAX = 125°C -3 3 TA = TMIN = -40°C -3.5 3 TA = 25°C LM50C -3 3 °C TA = TMAX = 125°C -4 4 TA = TMIN = -40°C -4 4 SENSOR OUTPUT V0°C Output voltage offset at 0°C 500 mV TC Temperature coefficient (sensor gain) TA = TJ = TMIN to TMAX 9.7 10 10.3 mV/°C VONL Output Nonlinearity(3) TA = TJ = TMIN to TMAX LM50 -0.8 0.8 °C ZOUT Output impedance TA = TJ = TMIN to TMAX 2000 4000 Ω TON Turn-On Time LM50 (Legacy chip) 5 µs LM50 (New chip) 30 TLTD Long-term stability and drift(4) TJ = 125°C for 1000 hours LM50 ±0.08 °C POWER SUPPLY IDD Operating current TA = TMIN to TMAX 4.5V ≤ +VS ≤ 10V LM50 (Legacy chip) 95 180 μA LM50 (New chip) 52 90 PSR Line regulation(5) TA = TMIN to TMAX 4.5V ≤ +VS ≤ 10V LM50 -1.2 1.2 mV/V ΔIDD Change of quiescent current TA = TMIN to TMAX 4.5V ≤ +VS ≤ 10V LM50 (Legacy chip) 2 μA LM50 (New chip) 8 IDD_TEMP Temperature coefficient of quiescent current TA = TMIN to TMAX 4.5V ≤ +VS ≤ 10V LM50B 1 μA/°C LM50C 2 (1) Limits are specified to TI's AOQL (Average Outgoing Quality Level). (2) Accuracy is defined as the error between the output voltage and 10mv/°C multiplied by case temperature of the device plus 500mV, at specified conditions of voltage, current, and temperature (expressed in °C). (3) Nonlinearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the rated temperature range of the device. (4) For best long-term stability, any precision circuit provides best results if the unit is aged at a warm temperature, and/or temperature cycled for at least 46 hours before long-term life test begins. This is especially true when a small (Surface-Mount) part is wave- soldered; allow time for stress relaxation to occur. The majority of the drift occurs in the first 1000 hours at elevated temperatures. The drift after 1000 hours does not continue at the first 1000 hour rate. (5) Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating effects can be computed by multiplying the internal dissipation by the thermal resistance. LM50, LM50HV SNIS118I – JULY 1999 – REVISED OCTOBER 2025 www.ti.com 6 Submit Document Feedback Copyright © 2025 Texas Instruments Incorporated Product Folder Links: LM50 LM50HV |
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