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RFP2N12 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza RFP2N12
Descripción Electrónicos  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

RFP2N12 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc N-Channel MOSFET Transistor
RFP2N12
www.iscsemi.com
1
FEATURES
·Drain Current -ID= 2A@ TC=25℃
·Drain Source Voltage -VDSS= 120V(Min)
·Static Drain-Source On-Resistance
-RDS(on) = 1.75Ω(Max)@VGS= 10V
DESCRIPTION
·
DC-to-DC Converter
·
General Industrial Applications
·
Power Motor Control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
120
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current-Continuous
2
A
IDM
Drain Current-Single Pulse
5
A
PD
Total Dissipation @TC=25℃
25
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
5
℃
/W
3
2
1
TO-220C Package


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