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RFD8P06E Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza RFD8P06E
Descripción Electrónicos  isc P-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

RFD8P06E Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc P-Channel MOSFET Transistor
RFD8P06E
www.iscsemi.com
1
FEATURES
·Drain Current -ID= -8A@ TC=25℃
·Drain Source Voltage -VDSS= -60V(Min)
·Static Drain-Source On-Resistance
-RDS(on) = 0.3Ω(Max)@VGS= -10V
DESCRIPTION
·
DC-to-DC Converter
·
General Industrial Applications
·
Power Motor Control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current-Continuous
-8
A
IDM
Drain Current-Single Pulse
-20
A
PD
Total Dissipation @TC=25℃
48
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
3.13
℃
/W


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