Figure 5. Relative variation of thermal impedance junction

to ambient versus pulse duration (SMA)

Z

/R

th(j-a)

th(j-a)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Single pulse

SMA

t (s)

p

Figure 6. Reverse leakage current versus reverse voltage

applied (typical values)

I (µA)

R

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

0

25

5 0

7 5

100

125

150

T =125°C

j

T =150°C

j

T =100°C

j

T =50°C

j

T =25°C

j

T =75°C

j

V (V)

R

Figure 7. Junction capacitance versus reverse voltage

applied (typical values)

C(pF)

10

100

1000

1

1 0

100

1000

V (V)

R

F=1MHz

V

=30mV

T =25°C

OSC

RMS

j

Figure 8. Forward voltage drop versus forward current

(low level)

I (A)

F

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typical v alues)

Tj=125°C

(Typical v alues)

V (V)

F

Figure 9. Forward voltage drop versus forward current

(high level)

I (A)

F

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

V (V)

F

T =25°C

(maximum values)

j

T =125°C

(maximum values)

j

T =125°C

(typical values)

j

Figure 10. Thermal resistance junction to ambient versus

copper surface under each lead (SMA)

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Rth(j-a) (°C/W)

(cm²)

Cu

S

SMA

STPS2150

Characteristics (curves)

DS3282 - Rev 8

page 4/13