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STPS2150AFN Datasheet(PDF) 2 Page - STMicroelectronics

No. de pieza STPS2150AFN
Descripción Electrónicos  150 V, 2 A power Schottky rectifier
PDF  13 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS2150AFN Datasheet(HTML) 2 Page - STMicroelectronics

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1
Characteristics
Table 1. Absolute ratings (limiting values, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
150
V
IF(RMS)
Forward rms current
30
A
IF(AV)
Average forward current δ =
0.5, square wave
SMA
TL = 145 °C
2
A
SMA Flat Notch TL = 145 °C
DO-15
TL = 130 °C
IFSM
Surge non repetitive forward
current
SMA
tp = 10 ms sinusoidal
75
A
SMA Flat Notch
70
DO-15
150
PARM
Repetitive peak avalanche
power
tp = 10 µs, Tj= 125 °C
170
W
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature (1)
+ 175
°C
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameter
Symbol
Parameter
Value
Unit
Rth(j-L)
Junction to lead
SMA
20
°C/W
SMA Flat Notch
20
Junction to lead
Lead length = 10 mm
DO-15
30
For more information, please refer to the following application note :
AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1)
Reverse leakage
current
Tj = 25 °C
VR = VRRM
-
0.5
1.5
µA
Tj = 125 °C
-
0.5
1.5
mA
VF(2)
Forward voltage
drop
Tj = 25 °C
IF = 2 A
-
0.78
0.82
V
Tj = 125 °C
-
0.62
0.67
Tj = 25 °C
IF = 4 A
-
0.86
0.89
Tj = 125 °C
-
0.70
0.75
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.59 x IF(AV) + 0.04 IF2(RMS)
STPS2150
Characteristics
DS3282 - Rev 8
page 2/13



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