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IS25LE512M-RHLA3:P-TY Datasheet(PDF) 98 Page - Integrated Silicon Solution, Inc

No. de pieza IS25LE512M-RHLA3:P-TY
Descripción Electrónicos  SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  189 Pages
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Fabricante Electrónico  ISSI [Integrated Silicon Solution, Inc]
Página de inicio  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE512M-RHLA3:P-TY Datasheet(HTML) 98 Page - Integrated Silicon Solution, Inc

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IS25LE512M
IS25WE512M
Integrated Silicon Solution, Inc.- www.issi.com
98
Rev. A6
06/16/2025
8.19 WRITE STATUS REGISTER OPERATION (WRSR, 01h)
The Write Status Register (WRSR) instruction allows the user to enable or disable the block protection and Status
Register write protection features by writing “0”s or “1”s into BP3, BP2, BP1, BP0, and SRWD bits. Also WRSR
instruction allows the user to di
sable or enable quad operation by writing “0” or “1” into the non-volatile QE bit.
To write Status Register bits, a standard Write Enable (06h) instruction must previously have been executed for
the device to accept Write Status Register (01h) instruction (Status Register bit WEL must equal 1).
Figure 8.47 Write Status Register Sequence In SPI Mode
Instruction = 01h
CE #
SCK
SI
SO
Data In
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Mode 3
Mode 0
7
3
2
1
0
6
5
4
High Impedence
Figure 8.48 Write Status Register QPI Sequence
01h
0
1
Mode 3
Mode 0
2
3
7:4
3:0
CE#
SCK
IO[3:0]
Data In



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