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IS25LE512M-RHLA3:P-TY Datasheet(PDF) 94 Page - Integrated Silicon Solution, Inc

No. de pieza IS25LE512M-RHLA3:P-TY
Descripción Electrónicos  SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  189 Pages
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Fabricante Electrónico  ISSI [Integrated Silicon Solution, Inc]
Página de inicio  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE512M-RHLA3:P-TY Datasheet(HTML) 94 Page - Integrated Silicon Solution, Inc

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IS25LE512M
IS25WE512M
Integrated Silicon Solution, Inc.- www.issi.com
94
Rev. A6
06/16/2025
8.15 CHIP ERASE OPERATION (CER, C7h/60h)
A Chip Erase (CER) instruction erases the entire memory array. Before the execution of CER instruction, the Write
Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is automatically reset after
completion of a chip erase operation.
The CER instruction code is input via the SI. Erase operation will start immediately after CE# is pulled high,
otherwise the CER instruction will not be executed. The internal control logic automatically handles the erase
voltage and timing.
Chip Erase (CER) instruction can be executed only when Block Protection (BP3~BP0) bits are set to 0s. If the BP
bits are not 0, the CER command is not executed and E_ERR and PROT_E are set.
Chip Erase (CER) instruction will skip sectors/blocks protected by ASP (DYB bits or PPB bits) and will not set
E_ERR and PROT_E if sectors/blocks are protected by ASP only.
Figure 8.39 Chip Erase Sequence In SPI Mode
Instruction = C7h/60h
CE#
SCK
SI
0
1
2
3
4
5
6
7
Mode 3
Mode 0
SO
High Impedance
Figure 8.40 Chip Erase Sequence In QPI Mode
C7h/60h
CE#
SCK
IO[3:0]
0
1
Mode 3
Mode 0



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