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IS25LE512M-RLLA3:P-TY Datasheet(PDF) 79 Page - Integrated Silicon Solution, Inc

No. de pieza IS25LE512M-RLLA3:P-TY
Descripción Electrónicos  SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  189 Pages
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Fabricante Electrónico  ISSI [Integrated Silicon Solution, Inc]
Página de inicio  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE512M-RLLA3:P-TY Datasheet(HTML) 79 Page - Integrated Silicon Solution, Inc

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IS25LE512M
IS25WE512M
Integrated Silicon Solution, Inc.- www.issi.com
79
Rev. A6
06/16/2025
Figure 8.16 Fast Read Quad I/O Sequence (EBh [EXTADD=1] or ECh, 4-byte address)
CE #
SCK
5
1
Data Out 1
Instruction = EBh/ECh
20
CE #
SCK
4
0
28
24
4-byte Address
High Impedance
16
12
8
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
Mode 3
Mode 0
...
tV
IO0
IO1
4
0
5
1
4
0
5
1
4
0
IO0
IO1
21
5
1
29
25
17
13
9
22
6
2
30
26
18
14
10
23
7
3
31
27
19
15
11
IO2
IO3
6
2
6
2
6
2
7
3
7
3
7
3
Data Out 2 Data Out 3
IO2
IO3
1
0
5
1
...
4
0
...
2
6
2
...
3
7
3
...
5
4
6
7
6 Dummy Cycles
Data Out 4 Data Out 5
4
0
5
1
6
2
7
3
Mode Bits
Notes:
1.
If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode
bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles
are same, then X should be Hi-Z.



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