September 2014

©2012 Fairchild Semiconductor Corporation

FDMC2674 Rev.F4

www.fairchildsemi.com

1

FDMC2674

N-Channel UltraFET Trench MOSFET

220V, 7.0A, 366m

Ω

Features

Max rDS(on) = 366mΩ at VGS = 10V, ID = 1.0A

Typ Qg = 12.7nC at VGS = 10V

Low Miller charge

Low Qrr Body Diode

Optimized efficiency at high frequencies

UIS Capability ( Single Pulse and Repetitive Pulse)

RoHS Compliant

General Description

UltraFET

device

combines

characteristics

that

enable

benchmark

efficiency

in

power

conversion

applications.

Optimized for rDS(on), low ESR, low total and Miller gate charge,

these devices are ideal for high frequency DC to DC converters.

Application

DC/DC converters and Off-Line UPS

Distributed Power Architectures

MOSFET Maximum Ratings T

A = 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

VDS

Drain to Source Voltage

220

V

VGS

Gate to Source Voltage

±20

V

ID

Drain Current -Continuous (Silicon limited)

TC= 25°C

7.0

A

-Continuous

TA = 25°C

(Note 1b)

1.0

-Pulsed

13.8

EAS

Single Pulse Avalanche Energy

(Note 3)

11

mJ

PD

Power Dissipation

TC = 25°C

42

W

Power Dissipation

TA = 25°C

(Note 1a)

2.1

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

RθJC

Thermal Resistance, Junction to Case

(Note 1)

3.0

°C/W

RθJA

Thermal Resistance, Junction to Ambient

(Note 1a)

60

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMC2674

FDMC2674

MLP 3.3X3.3

13 ’’

12 mm

3000 units

G

S

S

S

D

D

D

D

5

6

7

8

3

2

1

4

1

2

3

4

5

DD D D

G

S

S

S

Bottom

Top

MLP 3.3x3.3

6

7

8