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BUR51 Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza BUR51
Descripción Electrónicos  HIGH CURRENT NPN SILICON TRANSISTOR
PDF  4 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUR51 Datasheet(HTML) 1 Page - STMicroelectronics

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BUR51
HIGH CURRENT NPN SILICON TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
NPN TRANSISTOR
DESCRIPTION
The BUR51 is a silicon multiepitaxial planar NPN
transistor in modified Jedec TO-3 metal case,
intented
for
use
in
switching
and
linear
applications in military and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
June 1997
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
300
V
VCEO
Collector-Emitter Voltage (IB = 0)
200
V
VEBO
Emitter-Base Voltage (IC = 0)
10
V
IC
Collector Current
60
A
ICM
Collector Peak Current (tp = 10 ms)
80
A
IB
Base Current
16
A
Ptot
Total Dissipation at Tc
≤ 25 oC
350
W
Tstg
Storage Temperature
-65 to 200
oC
Tj
Max. Operating Junction Temperature
200
oC
1/4


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