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CSD18532KCS Datasheet(PDF) 3 Page - Texas Instruments |
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CSD18532KCS Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 14 page  3 Specifications 3.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0V, ID = 250μA 60 V IDSS Drain-to-Source Leakage Current VGS = 0V, VDS = 48V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0V, VGS = 20V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250μA 1.5 1.8 2.2 V RDS(on) Drain-to-Source On Resistance VGS = 4.5V, ID = 100A 4.2 5.3 mΩ VGS = 10V, ID = 100A 3.3 4.2 mΩ gfs Transconductance VDS = 30V, ID = 100A 187 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0V, VDS = 30V, ƒ = 1MHz 3900 4680 pF Coss Output Capacitance 470 564 pF Crss Reverse Transfer Capacitance 11 14 pF RG Series Gate Resistance 1.3 2.6 Ω Qg Gate Charge Total (4.5V) VDS = 30V, ID = 100A 21 25 nC Qg Gate Charge Total (10V) 44 53 nC Qgd Gate Charge Gate-to-Drain 6.9 nC Qgs Gate Charge Gate-to-Source 10 nC Qg(th) Gate Charge at Vth 7.3 nC Qoss Output Charge VDS = 30V, VGS = 0V 52 nC td(on) Turn On Delay Time VDS = 30V, VGS = 10V, IDS = 100A, RG = 0Ω 7.8 ns tr Rise Time 5.3 ns td(off) Turn Off Delay Time 24.2 ns tf Fall Time 5.6 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage ISD = 100A, VGS = 0V 0.8 1 V Qrr Reverse Recovery Charge VDS= 30V, IF = 100A, di/dt = 300A/μs 127 nC trr Reverse Recovery Time 57 ns 3.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-Case Thermal Resistance 0.6 °C/W RθJA Junction-to-Ambient Thermal Resistance 62 www.ti.com CSD18532KCS SLPS361C – AUGUST 2012 – REVISED MARCH 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3 Product Folder Links: CSD18532KCS |
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