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STF13NM50N Datasheet(PDF) 5 Page - STMicroelectronics |
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STF13NM50N Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 17 page ![]() STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N Electrical characteristics 5/17 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD=250V, ID=6A, RG=4.7Ω, VGS=10V (see Figure 17) 30 15 40 10 ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 12 48 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD=12A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12A, VDD=100V di/dt = 100A/µs,Tj=25°C (see Figure 19) 300 3 22 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12A,VDD=100V di/dt=100A/µs,Tj=150°C (see Figure 19) 370 4 22 ns µC A |
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