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CSD17381F4 Datasheet(PDF) 5 Page - Texas Instruments

No. de pieza CSD17381F4
Descripción Electrónicos  CSD17381F4 30-V N-Channel FemtoFET™ MOSFET
PDF  13 Pages
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Fabricante Electrónico  TI2 [Texas Instruments]
Página de inicio  https://www.ti.com
Logo TI2 - Texas Instruments

CSD17381F4 Datasheet(HTML) 5 Page - Texas Instruments

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0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
ID = 250uA
G001
Figure 5-6. Threshold Voltage vs Temperature
60
70
80
90
100
110
120
130
140
150
160
0
2
4
6
8
10
12
VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 0.5A
TC = 125ºC Id = 0.5A
G001
Figure 5-7. On-State Resistance vs Gate-to-Source
Voltage
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
VGS = 1.8V
VGS = 8V
ID =0.5A
G001
Figure 5-8. Normalized On-State Resistance vs
Temperature
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
Figure 5-9. Typical Diode Forward Voltage
VDS - Drain-To-Source Voltage (V)
0.1
1
10
50
0.01
0.1
1
10
100
D010
100 ms
10 ms
1 ms
100 µs
10 µs
Single Pulse Typical RθJA =250°C/W (min Cu)
Figure 5-10. Maximum Safe Operating Area
0.1
1
10
100
0.001
0.01
0.1
1
TAV - Time in Avalanche (mS)
TC = 25ºC
TC = 125ºC
G001
Figure 5-11. Single Pulse Unclamped Inductive
Switching
www.ti.com
CSD17381F4
SLPS411G – APRIL 2013 – REVISED JANUARY 2022
Copyright © 2022 Texas Instruments Incorporated
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