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MMF80R650PTH Datasheet(PDF) 2 Page - MagnaChip Semiconductor.

No. de pieza MMF80R650PTH
Descripción Electrónicos  800V 0.65Ω N-channel MOSFET
PDF  10 Pages
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Fabricante Electrónico  MGCHIP [MagnaChip Semiconductor.]
Página de inicio  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MMF80R650PTH Datasheet(HTML) 2 Page - MagnaChip Semiconductor.

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MMF80R650P Datasheet
Jul. 2021. Revision 1.2
Magnachip Semiconductor Ltd.
2
Parameter
Symbol
Rating
Unit
Note
Drain – Source voltage
VDSS
800
V
Gate – Source voltage
VGSS
±
30
V
Continuous drain current(2)
ID
8
A
TC=25oC
5.05
A
TC=100oC
Pulsed drain current(3)
IDM
24
A
Power dissipation
PD
32
W
Single - pulse avalanche energy
EAS
340
mJ
MOSFET dv/dt ruggedness
dv/dt
50
V/ns
Diode dv/dt ruggedness(5)
dv/dt
15
V/ns
Storage temperature
Tstg
-
55 ~150
oC
Maximum operating junction
temperature
Tj
150
oC
1)
ID limited by maximum junction temperature.
2)
Pulse width tP limited by Tj,max
3)
DC input voltage from all three leads to external heat sink
4)
ISD ≤ ID, VDS peak ≤ V(BR)DSS
Parameter
Symbol
Value
Unit
Thermal resistance, junction-case max
Rthjc
3.9
oC/W
Thermal resistance, junction-ambient max
Rthja
62.5
oC/W
Thermal Characteristics
Absolute Maximum Rating (Tc=25 oC unless otherwise specified)



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