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M25PE16-VMP6TP Datasheet(PDF) 49 Page - STMicroelectronics |
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M25PE16-VMP6TP Datasheet(HTML) 49 Page - STMicroelectronics |
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49 / 56 page ![]() M25PE16 DC and AC parameters 49/56 Table 18. AC characteristics Test conditions specified in Table 14 and Table 15 Symbol Alt. Parameter Min. Typ. Max. Unit fC fC Clock Frequency for the following instructions: FAST_READ, RDLR, PW, PP, WRLR, PE, SE, SSE, DP, RDP, WREN, WRDI, RDSR, WRSR D.C. 50 MHz fR Clock Frequency for READ instructions D.C. 33 MHz tCH (1) tCLH Clock High Time 9 ns tCL (1) tCLL Clock Low Time 9 ns Clock Slew Rate 2 (peak to peak) 0.1 V/ns tSLCH tCSS S Active Setup Time (relative to C) 5 ns tCHSL S Not Active Hold Time (relative to C) 5 ns tDVCH tDSU Data In Setup Time 2 ns tCHDX tDH Data In Hold Time 5 ns tCHSH S Active Hold Time (relative to C) 5 ns tSHCH S Not Active Setup Time (relative to C) 5 ns tSHSL tCSH S Deselect Time 100 ns tSHQZ (2) tDIS Output Disable Time 8 ns tCLQV tV Clock Low to Output Valid 8 ns tCLQX tHO Output Hold Time 0 ns tWHSL (3) Write Protect Setup Time 50 ns tSHWL (3) Write Protect Hold Time 100 ns tDP (2) S to Deep Power-down 3 µs tRDP (2) S High to Standby Mode 30 µs tW Write Status Register Cycle Time 3 15 ms tPW (4) Page Write Cycle Time (256 Bytes) 11 23 ms tPP (4) Page Program Cycle Time (256 Bytes) 0.8 3ms Page Program Cycle Time (n Bytes) int(n/8) × 0.025(5) tPE Page Erase Cycle Time 10 20 ms tSE Sector Erase Cycle Time 1 5 s tSSE SubSector Erase Cycle Time 40 150 ms tBE Bulk Erase Cycle Time 17 60 s 1. tCH + tCL must be greater than or equal to 1/ fC 2. Value guaranteed by characterization, not 100% tested in production. 3. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1. 4. When using PP and PW instructions to update consecutive Bytes, optimized timings are obtained with one sequence including all the Bytes versus several sequences of only a few Bytes (1 ≤n ≤256). 5. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16. |
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