TSM4431CSRL datasheet(2/6 Pages) TSC

2 / 6 page

TSM4431

30V P-Channel MOSFET

2/6

Version: A07

Electrical Specifications

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250uA

BVDSS

-30

Gate Threshold Voltage

VDS = VGS, ID = -250µA

VGS(TH)

-1

-3

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = -30V, VGS = 0V

IDSS

1.0

µA

On-State Drain Current

VDS ≤ -5V, VGS = -4.5V

ID(ON)

-7

VGS = -10V, ID = -5.8A

Drain-Source On-State Resistance

VGS = -4.5V, ID = -4.5A

RDS(ON)

mΩ

Forward Transconductance

VDS = -15V, ID = -5.3A

gfs

Diode Forward Voltage

IS = -2.3A, VGS = 0V

VSD

-1.1

Dynamic

Total Gate Charge

18.09

Gate-Source Charge

Qgs

6.52

Gate-Drain Charge

VDS = -15V, ID = -3.5A,

VGS = -10V

Qgd

3.25

Input Capacitance

Ciss

1047.98

Output Capacitance

Coss

172.82

Reverse Transfer Capacitance

VDS = -15V, VGS = 0V,

f = 1.0MHz

Crss

115.50

Switching

Turn-On Delay Time

td(on)

20.52

Turn-On Rise Time

4.43

Turn-Off Delay Time

td(off)

42.81

Turn-Off Fall Time

VDD = -15V, RL = 15Ω,

ID = -1A, VGEN = -10V,

RG = 6Ω

7.35

Notes:

a. pulse test: PW ≤300µS, duty cycle ≤2%

b. For DESIGN AID ONLY, not subject to production testing.

b. Switching time is essentially independent of operating temperature.

TSM4431CSRL Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

TSM4431CSRL Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

Html Pages

1 2 3 4 5 6

Datasheet Descarga

Enlace URL