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STRH50P6FSY1 Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STRH50P6FSY1
Descripción Electrónicos  P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET??Power MOSFET
PDF  13 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STRH50P6FSY1 Datasheet(HTML) 5 Page - STMicroelectronics

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STRH50P6FSY3
Electrical characteristics
5/13
2.2
Post-irradiation
The ST rad-hard power MOSFETs are tested to verify the radiation capability. The
technology is extremely resistant to assurance well functioning of the device inside the
radiation environments. Every manufacturing lot is tested for total ionizing dose.
(@Tj=25°C up to 100Krad (a))
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
50
200
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 50 A, VGS = 0
1.1
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 50 A, di/dt = 100 A/µs
VDD= 20 V, Tj = 25°C
240
300
3.85
25.6
360
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 50 A, di/dt = 100 A/µs
VDD= 20 V, Tj = 150°C
300
376
5.64
30
451
ns
µC
A
a.
According to ESCC 22900 specification, Co60 gamma rays, dose rate:0.1rad/sec.
Table 9.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
IDSS
Zero gate voltage drain
current (VGS = 0)
80% BVDss
10
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±18 V
±
100
nA
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS = 0
100
V
VGS(th)
Gate threshold voltage
VDS =VGS, ID = 1 mA
2
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 12 V, ID = 25 A
0.047
0.053
Ω



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