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2SC2782A Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC2782A Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() 2SC2782A 2007-11-01 2 ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V (BR) CBO IC = 20mA, IE = 0 36 — — V Collector-Emitter Breakdown Voltage V (BR) CEO IC = 50mA, IB = 0 16 — — V Emitter-Base Breakdown Voltage V (BR) EBO IE = 1mA, IC = 0 4 — — V DC Current Gain hFE VCE = 5V, IC = 10A * 10 — — Collector Output Capacitance Cob VCB = 12.5V, IE = 0 f = 1MHz — — 320 pF Output Power Po 80 90 ― W Power Gain Gp 6.4 6.8 ― dB Collector Efficiency ηC (Fig.) VCC = 12.5V, f = 175MHz Pi = 18W 60 70 — % Series Equivalent Input Impedance Zin — 1.0 +j1.5 — Ω Series Equivalent Output Impedance Zout VCC = 12.5V f = 175MHz, Po = 80W — 1.2 +j1.8 — Ω * Pulse Test: Pulse Width ≤ 100μs, Duty Cycle ≤ 3% |
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