2SC2782A

2007-11-01

1

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

2SC2782A

VHF BAND POWER AMPLIFIER APPLICATIONS

Output Power

: Po = 80W (Min.)

ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

36

V

Collector-Emitter Voltage

16

V

Emitter-Base Voltage

4

V

Collector Current

20

A

Collector Power Dissipation

220

W

Junction Temperature

175

°C

Storage Temperature Range

−65~175

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

MARKING

Dot

Lot No.

JEDEC

—

EIAJ

—

TOSHIBA

2−13C1A

Weight: 5.5g

Unit in mm

2SC2782

TOSHIBA

JAPAN