STPS2150RL datasheet(3/7 Pages) STMICROELECTRONICS

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STPS2150

Characteristics

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Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Figure 5.

Non repetitive surge peak

forward current versus overload

duration - maximum values (SMA)

Figure 6.

Non repetitive surge peak forward

current versus overload duration

- maximum values (DO-15)

I (A)

1.E-03

1.E-02

1.E-01

1.E+00

δ=0.5

t(s)

T =25°C

T =75°C

T =125°C

I (A)

1.E-03

1.E-02

1.E-01

1.E+00

δ=0.5

t(s)

T =25°C

T =75°C

T =125°C

Figure 7.

Relative variation of thermal

impedance junction to ambient

versus pulse duration - epoxy

printed circuit board, eCu = 35 µm,

recommended pad layout (SMA)

Figure 8.

Relative variation of thermal

impedance junction to ambient

versus pulse duration (DO-15)

Z/R

th(j-a)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Z/R

th(j-a)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

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