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FS2ASJ-3 Datasheet(PDF) 3 Page - Powerex Power Semiconductors

No. de pieza FS2ASJ-3
Descripción Electrónicos  Nch POWER MOSFET HIGH-SPEED SWITCHING USE
PDF  4 Pages
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Fabricante Electrónico  POWEREX [Powerex Power Semiconductors]
Página de inicio  http://www.pwrx.com
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FS2ASJ-3 Datasheet(HTML) 3 Page - Powerex Power Semiconductors

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Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
101
3
5
7
102
2
3
5
7
103
2
3
2
5
7
100 2101
35 7
35 7
2
102
35 7
2 3
2
Ciss
Coss
Crss
Tch = 25
°C
VGS = 0V
f = 1MHZ
100
101
2
3
5
7
102
2
3
5
7
103
2
3
5
7
10–1
100
23 4 5 7
101
23 4 5 7
td(off)
td(on)
tr
Tch = 25
°C
VDD = 80V
VGS = 10V
RGEN = RGS = 50
Ω
tf
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT ID (A)
10–1
100
23 4 5 7
101
23 4 5 7
10–1
100
2
3
4
5
7
101
2
3
4
5
7
TC = 25
°C
75
°C
125
°C
VDS = 5V
Pulse Test
0
1.0
2.0
3.0
4.0
5.0
02468
10
ID = 3A
2A
1A
Tc = 25
°C
Pulse Test
0
2
4
6
8
10
02468
10
Tc = 25
°C
VDS = 10V
Pulse Test
0
0.2
0.4
0.6
0.8
1.0
10–2 210–1
35 7
2
100
35 7
2
101
35 7
VGS = 4V
10V
Tc = 25
°C
Pulse Test



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