Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

Preview PDF HTML

FS10AS-3 Datasheet(PDF) 2 Page - Powerex Power Semiconductors

No. de pieza FS10AS-3
Descripción Electrónicos  Nch POWER MOSFET HIGH-SPEED SWITCHING USE
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  POWEREX [Powerex Power Semiconductors]
Página de inicio  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

FS10AS-3 Datasheet(HTML) 2 Page - Powerex Power Semiconductors

  FS10AS-3 Datasheet HTML 1Page - Powerex Power Semiconductors FS10AS-3 Datasheet HTML 2Page - Powerex Power Semiconductors FS10AS-3 Datasheet HTML 3Page - Powerex Power Semiconductors FS10AS-3 Datasheet HTML 4Page - Powerex Power Semiconductors  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10AS-3
HIGH-SPEED SWITCHING USE
0
10
20
30
40
50
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
VGS = 20V 10V
6V
7V
5V
TC = 25°C
Pulse Test
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
VGS = 20V
TC = 25°C
Pulse Test
10V
6V
5V
7V
100
101
2
3
5
7
102
2
3
5
7
2
3
3
2101
35 7
2
102
35 7
2
2
103
35 7
5
7
tw = 10
ms
TC = 25°C
Single Pulse
100
ms
10ms
1ms
DC
PERFORMANCE CURVES
ELECTRICAL CHARACTERISTICS (Tch = 25
°C)
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
V
µA
mA
V
m
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
150
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
122
0.61
12
1250
175
75
25
30
60
34
1.0
—
100
—
±0.1
0.1
4.0
170
0.85
—
—
—
—
—
—
—
—
1.5
3.57
—
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
ID = 1mA, VGS = 0V
VGS =
±20V, VDS = 0V
VDS = 150V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 80V, ID = 5A, VGS = 10V, RGEN = RGS = 50
Ω
IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/
µs



Html Pages

1 2 3 4


Datasheet Descarga

Go To PDF Page


Enlace URL



¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Enlace a la hoja de datos    |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com