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BFC63 Datasheet(PDF) 2 Page - Seme LAB

No. de pieza BFC63
Descripción Electrónicos  4TH GENERATION MOSFET
PDF  2 Pages
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Fabricante Electrónico  SEME-LAB [Seme LAB]
Página de inicio  http://www.semelab.co.uk
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BFC63 Datasheet(HTML) 2 Page - Seme LAB

  BFC63 Datasheet HTML 1Page - Seme LAB BFC63 Datasheet HTML 2Page - Seme LAB  
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BFC63
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
6.5
26
1.3
130
260
520
1.3
2.6
5.2
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
IS
ISM
VSD
trr
Qrr
VGS = 0V , IS = – ID [Cont.]
IS = – ID [Cont.] dls / dt = 100A/µs
Continuous Source Current (Body Diode)
Pulsed Source Current1(Body Diode)
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
µC
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
125
125
26
SOA1
SOA2
ILM
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
W
W
A
Characteristic
Min.
Typ.
Max. Unit
1.0
80
RθJC
RθJA
Junction to Case
Junction to Ambient
°C/W
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
SAFE OPERATING AREA CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.]
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.]
RG = 1.8Ω
pF
nC
ns
764
950
153
214
54
81
34
55
4.6
7
15
23
10
20
11
22
31
47
10
20
LAB
SEME
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
VDS = 0.4VDSS , t = 1 Sec.
IDS = PD / 0.4VDSS
VDS = PD / ID [Cont.]
IDS = ID [Cont.] , t = 1 Sec.



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