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TSM9435CS Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

No. de pieza TSM9435CS
Descripción Electrónicos  30V P-Channel Enhancement-Mode MOSFET
PDF  3 Pages
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Fabricante Electrónico  TSC [Taiwan Semiconductor Company, Ltd]
Página de inicio  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM9435CS Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

  TSM9435CS Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd TSM9435CS Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd TSM9435CS Datasheet HTML 3Page - Taiwan Semiconductor Company, Ltd  
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TSM9435
2-3
2005/06 rev. C
Electrical Characteristics
(Ta = 25
oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
-30
--
--
V
Drain-Source On-State Resistance
VGS = -10V, ID = -5.3A
RDS(ON)
--
50
60
Drain-Source On-State Resistance
VGS = -4.5V, ID = -4.2A
RDS(ON)
--
70
90
mΩ
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
-1.0
-1.7
-3.0
V
Zero Gate Voltage Drain Current
VDS = -24V, VGS = 0V
IDSS
--
--
-1.0
uA
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Forward Transconductance
VDS = -15V, ID = -5.3A
gfs
4
7
--
S
Dynamic
Total Gate Charge
Qg
--
9.52
--
Gate-Source Charge
Qgs
--
3.43
--
Gate-Drain Charge
VDS = -15V, ID = -5.3A,
VGS = -10V
Qgd
--
1.71
--
nC
Turn-On Delay Time
td(on)
--
10.8
--
Turn-On Rise Time
tr
--
2.33
--
Turn-Off Delay Time
td(off)
--
22.53
--
Turn-Off Fall Time
VDD = -15V, RL = 15Ω,
ID = -1A, VGEN = -10V,
RG = 6Ω
tf
--
3.87
--
nS
Input Capacitance
Ciss
--
551.57
--
Output Capacitance
Coss
--
90.96
--
Reverse Transfer Capacitance
VDS = -15V, VGS = 0V,
f = 1.0MHz
Crss
--
60.79
--
pF
Source-Drain Diode
Max. Diode Forward Current
IS
--
--
-1.9
A
Diode Forward Voltage
IS = -5.3A, VGS = 0V
VSD
--
--
-1.3
V
Note : pulse test: pulse width <=300uS, duty cycle <=2%



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