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TIPL761B Datasheet(PDF) 2 Page - Power Innovations Ltd

No. de pieza TIPL761B
Descripción Electrónicos  NPN SILICON POWER TRANSISTORS
PDF  7 Pages
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Fabricante Electrónico  POINN [Power Innovations Ltd]
Página de inicio  http://www.bourns.com
Logo POINN - Power Innovations Ltd

TIPL761B Datasheet(HTML) 2 Page - Power Innovations Ltd

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TIPL761B, TIPL761C
NPN SILICON POWER TRANSISTORS
2
MAY 1989 - REVISED MARCH 1997
PRODUCT
INFORMATION
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCEO(sus)
Collector-emitter
sustaining voltage
IC =
10 mA
L = 25 mH
(see Note 2)
TIPL761B
TIPL761C
500
550
V
ICES
Collector-emitter
cut-off current
VCE = 1100 V
VCE = 1200 V
VCE = 1100 V
VCE = 1200 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
TC = 100°C
TC = 100°C
TIPL761B
TIPL761C
TIPL761B
TIPL761C
50
50
200
200
µA
ICEO
Collector cut-off
current
VCE = 500 V
VCE = 550 V
IB = 0
IB = 0
TIPL761B
TIPL761C
50
50
µA
IEBO
Emitter cut-off
current
VEB =
10 V
IC = 0
1
mA
hFE
Forward current
transfer ratio
VCE =
5 V
IC = 0.5 A
(see Notes 3 and 4)
20
60
VCE(sat)
Collector-emitter
saturation voltage
IB =
0.4 A
IB =
0.6 A
IB =
0.6 A
IC =
2 A
IC =
3 A
IC =
3 A
(see Notes 3 and 4)
TC = 100°C
1.0
2.5
5.0
V
VBE(sat)
Base-emitter
saturation voltage
IB =
0.4 A
IB =
0.6 A
IB =
0.6 A
IC =
2 A
IC =
3 A
IC =
3 A
(see Notes 3 and 4)
TC = 100°C
1.2
1.4
1.3
V
ft
Current gain
bandwidth product
VCE =
10 V
IC = 0.5 A
f =
1 MHz
12
MHz
Cob
Output capacitance
VCB =
20 V
IE = 0
f = 0.1 MHz
110
pF
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.25
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS †
MIN
TYP
MAX
UNIT
tsv
Voltage storage time
IC = 3 A
VBE(off) = -5 V
IB(on) = 0.6 A
(see Figures 1 and 2)
2.5
µs
trv
Voltage rise time
300
ns
tfi
Current fall time
250
ns
tti
Current tail time
150
ns
txo
Cross over time
400
ns
tsv
Voltage storage time
IC = 3 A
VBE(off) = -5 V
IB(on) = 0.6 A
TC = 100°C
(see Figures 1 and 2)
3
µs
trv
Voltage rise time
500
ns
tfi
Current fall time
250
ns
tti
Current tail time
150
ns
txo
Cross over time
750
ns



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