STP4N150 datasheet(1/14 Pages) STMICROELECTRONICS

No. de pieza	STP4N150

Descripción Electrónicos	N-channel 1500V - 5廓 - 4A - TO-220/TO-247 Very high PowerMESH??Power MOSFET

PDF	14 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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1 / 14 page

August 2006

Rev 4

1/14

14

STP4N150

STW4N150

N-channel 1500V - 5

Ω - 4A - TO-220/TO-247

Very high PowerMESH™ Power MOSFET

General features

■ Avalanche ruggedness

■ Gate charge minimized

■ Very low intrinsic capacitances

■ High speed switching

Description

Using the well consolidated high voltage MESH

OVERLAY™ process, STMicroelectronics has

designed an advanced family of Power MOSFETs

with outstanding performances. The strengthened

layout coupled with the Company’s proprietary

edge termination structure, gives the lowest

RDS(on) per area, unrivalled gate charge and

switching characteristics.

Applications

■ Switching application

Internal schematic diagram

Type

VDSS

(@Tjmax)

RDS(on)

ID

STP4N150

1500 V

< 7

Ω

4A

STW4N150

1500 V

< 7

Ω

4A

TO-220

TO-247

1

2

3

www.st.com

Order codes

Part number

Marking

Package

Packaging

STP4N150

P4N150

TO-220

Tube

STW4N150

W4N150

TO-247

Tube

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STP4N150 Datasheet(PDF) 1 Page - STMicroelectronics

STP4N150 Datasheet(HTML) 1 Page - STMicroelectronics

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