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STB140NF55 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STB140NF55
Descripción Electrónicos  N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™II Power MOSFET
PDF  15 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB140NF55 Datasheet(HTML) 3 Page - STMicroelectronics

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STB140NF55 - STB140NF55-1 - STP140NF55
Electrical ratings
3/15
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
55
V
VGS
Gate- source voltage
±20
V
ID
(1)
1.
Current limited by package
Drain current (continuous) at TC = 25°C
80
A
ID
(1)
Drain current (continuous) at TC = 100°C
80
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25°C
300
W
Derating factor
2
W/°C
dv/dt (3)
3.
ISD < 80A, di/dt < 300A/µs, VDD=80%V(BR)DSS
Peak diode recovery voltage slope
10
V/ns
EAS
(4)
4.
Starting Tj = 25°C, ID = 40A, VDD = 30V
Single pulse avalance energy
1.3
J
Tstg
Storage temperature
–55 to 175
°C
Tj
Operating junction temperature
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
TO-220 - I²PAK
D²PAK
Rthj-case
Thermal resistance junction-case max
0.5
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
--
°C/W
Rthj-pcb (1)
1.
When mounted on 1 inch², FR4 board, 2 oz Cu
Thermal resistance junction-pcb max
--
35
°C/W
Tl
Maximum lead temperature for soldering
purpose (for 10 sec, 1.6mm from case)
300
°C



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