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APTM120H57FT3G Datasheet(PDF) 6 Page - Microsemi Corporation

No. de pieza APTM120H57FT3G
Descripción Electrónicos  Full - Bridge MOSFET Power Module
PDF  6 Pages
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Fabricante Electrónico  MICROSEMI [Microsemi Corporation]
Página de inicio  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120H57FT3G Datasheet(HTML) 6 Page - Microsemi Corporation

  APTM120H57FT3G Datasheet HTML 1Page - Microsemi Corporation APTM120H57FT3G Datasheet HTML 2Page - Microsemi Corporation APTM120H57FT3G Datasheet HTML 3Page - Microsemi Corporation APTM120H57FT3G Datasheet HTML 4Page - Microsemi Corporation APTM120H57FT3G Datasheet HTML 5Page - Microsemi Corporation APTM120H57FT3G Datasheet HTML 6Page - Microsemi Corporation  
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APTM120H57FT3G
www.microsemi.com
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Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
160
180
5
1015
20
253035
ID, Drain Current (A)
VDS=800V
RG=5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
5
10
15
20253035
ID, Drain Current (A)
VDS=800V
RG=5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
5
101520
25
3035
ID, Drain Current (A)
VDS=800V
RG=5Ω
TJ=125°C
L=100µH
Eon
Eoff
Eoff
0
1
2
3
4
0
5
10
15
20
25
30
35
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=800V
ID=17A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
25
50
75
100
125
150
175
200
225
4
6
8
101214
16
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=800V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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