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APTM50DAM38CTG Datasheet(PDF) 7 Page - Microsemi Corporation |
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APTM50DAM38CTG Datasheet(HTML) 7 Page - Microsemi Corporation |
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7 / 7 page ![]() APTM50DAM38CTG www.microsemi.com 7 – 7 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 0 30 60 90 120 00.511.522.5 33.5 VF Forward Voltage (V) Reverse Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 0 200 400 600 800 1000 1200 200 300 400 500 600 700 800 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 0 500 1000 1500 2000 2500 1 10 100 1000 VR Reverse Voltage Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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