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APTM10HM09FT3G Datasheet(PDF) 5 Page - Microsemi Corporation

No. de pieza APTM10HM09FT3G
Descripción Electrónicos  Full - Bridge MOSFET Power Module
PDF  6 Pages
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Fabricante Electrónico  MICROSEMI [Microsemi Corporation]
Página de inicio  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM10HM09FT3G Datasheet(HTML) 5 Page - Microsemi Corporation

  APTM10HM09FT3G Datasheet HTML 1Page - Microsemi Corporation APTM10HM09FT3G Datasheet HTML 2Page - Microsemi Corporation APTM10HM09FT3G Datasheet HTML 3Page - Microsemi Corporation APTM10HM09FT3G Datasheet HTML 4Page - Microsemi Corporation APTM10HM09FT3G Datasheet HTML 5Page - Microsemi Corporation APTM10HM09FT3G Datasheet HTML 6Page - Microsemi Corporation  
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APTM10HM09FT3G
www.microsemi.com
5 – 6
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
VGS=10V
ID= 69.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
Maximum Safe Operating Area
10ms
1ms
100µs
1
10
100
1000
110
100
VDS, Drain to Source Voltage (V)
Single pulse
TJ=150°C
TC=25°C
limited by
RDSon
Ciss
Crss
Coss
100
1000
10000
100000
0
1020304050
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
VDS=20V
VDS=50V
VDS=80V
0
2
4
6
8
10
12
14
16
0
100
200
300
400
500
Gate Charge (nC)
Gate Charge vs Gate to Source Voltage
ID=139A
TJ=25°C



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