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APTGT200H60G Datasheet(PDF) 1 Page - Microsemi Corporation

No. de pieza APTGT200H60G
Descripción Electrónicos  Full - Bridge Trench Field Stop IGBT Power Module
PDF  6 Pages
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Fabricante Electrónico  MICROSEMI [Microsemi Corporation]
Página de inicio  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGT200H60G Datasheet(HTML) 1 Page - Microsemi Corporation

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APTGT200H60G
www.microsemi.com
1 - 6
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
G4
0/VBUS
E3
Q3
G3
OUT2
VBUS
E1
Q1
G1
E4
Q4
OUT1
E2
Q2
G2
E2
G2
G4
E4
E3
G1
E1
0/VBUS
VBUS
OUT2
OUT1
G3
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC= 25°C
290
IC
Continuous Collector Current
TC= 80°C
200
ICM
Pulsed Collector Current
TC= 25°C
400
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
625
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 150°C
400A @ 550V
VCES = 600V
IC = 200A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT® Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Full - Bridge
Trench + Field Stop IGBT®
Power Module


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