APTGT200H60G

www.microsemi.com

5 - 6

Forward Characteristic of diode

0

50

100

150

200

250

300

350

400

0

0.4

0.8

1.2

1.6

2

2.4

V

Hard

switching

ZCS

ZVS

0

20

40

60

80

100

120

0

50

100

150

200

250

I

D=50%

Operating Frequency vs Collector Current

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration in Seconds

Diode

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