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ZXMS6003GTA Datasheet(PDF) 5 Page - Diodes Incorporated

No. de pieza ZXMS6003GTA
Descripción Electrónicos  60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET WITH PROGRAMMABLE CURRENT LIMIT
PDF  9 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
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ZXMS6003GTA Datasheet(HTML) 5 Page - Diodes Incorporated

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ZXMS6003G
Electrical Characteristics (@TA = +25°C, unless otherwise stated.)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Static Characteristics
Drain-Source Clamp Voltage
VDS(AZ)
60
70
75
V
ID = 10mA
Off State Drain Current
IDSS
0.1
3
µA
VDS = 12V, VIN = 0V
Off State Drain Current
IDSS
3
15
µA
VDS = 32V, VIN = 0V
Input Threshold Voltage (Note 8)
VIN(TH)
1
2.1
V
VDS = VGS, ID = 1mA
Input Current
IIN
0.7
1.2
mA
VIN = 5V
Input Current
IIN
1.5
2.7
mA
VIN = 7V
Input Current
IIN
4
7
mA
VIN = 10V
Static Drain-Source On-State
Resistance
RDS(ON)
520
675
m
VIN = 5V, ID = 0.2A
Static Drain-Source On-State
Resistance
RDS(ON)
385
500
m
VIN = 10V, ID = 0.5A
Current Limit (Note 9)
ID(LIM)
0.2
0.3
0.4
A
VIN = 5V, VDS = 10V, RPROG = 20k
Current Limit (Note 9)
ID(LIM)
0.7
0.9
1.2
A
VIN = 10V, VDS = 10V, RPROG = 20k
Dynamic Characteristics
Turn-On Time (VIN to 90% ID)
tON
3
µs
RPROG = 20k, RL = 22
Ω, VIN = 0 to 10V,
VDD = 12V
Turn-Off Time (VIN to 90% ID)
tOFF
13
µs
RPROG = 20k, RL = 22
Ω, VIN = 10V to 0V,
VDD = 12V
Slew Rate On (70 to 50% VDD)
dVDS/dtON
8
V/µs
RPROG= 20k, RL = 22
Ω, VIN = 0 to 10V,
VDD = 12V
Slew Rate Off (50 to 70% VDD)
dVDS/dtON
3.2
V/µs
RPROG = 20k, RL = 22
Ω, VIN = 10V to 0V,
VDD = 12V
Protection Functions (Note 10)
Required Input Voltage for Over-
Temperature Protection
VPROT
4.5
V
Thermal Overload Trip
Temperature
TJT
+150
+175
°C
Thermal Hysteresis
+1
°C
Unclamped Single Pulse Inductive
Energy TJ = +25°C
EAS
550
mJ
ID(ISO) = 0.7A, VDD = 32V
Unclamped Single Pulse Inductive
Energy TJ = +150°C
EAS
200
mJ
ID(ISO) = 0.7A, VDD = 32V
Status Flag
Normal Operation
VSTATUS
4.95
V
VIN = 5V
Current Limit Operating
VSTATUS
2.5
V
VIN = 5V
Thermal Shutdown Activated
VSTATUS
0.2
1
V
VIN = 5V
Normal Operation
VSTATUS
8
V
VIN = 10V
Current Limit Operation
VSTATUS
3
V
VIN = 10V
Thermal Shutdown Activated
VSTATUS
0.35
1
V
VIN = 10V
Inverse Diode
Source Drain Voltage
VSD
1
V
VIN = 0V, -ID = 1.4A
Notes:
8. Protection features may operate outside spec for VIN < 4.5V.
9. The drain current is limited to a reduced value when VDS exceeds a safe level.
10. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered
as “outside” normal operating range. Protection functions are not designed for continuous, repetitive operation.
ZXMS6003G
Document number: DS33607 Rev. 5 - 2
5 of 9
www.diodes.com
July 2019
© Diodes Incorporated



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