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FDV304P Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

No. de pieza FDV304P
Descripción Electrónicos  P-Channel Enhancement MOSFET
PDF  5 Pages
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Fabricante Electrónico  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Página de inicio  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

FDV304P Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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SMD Type
P-Channel Enhancement MOSFET
■
Features
●
VDS (V) =-30V
●
ID =-4.2 A (VGS =-10V)
●
RDS(ON) ＜ 65mΩ (VGS =-4.5V)
●
RDS(ON) ＜ 120mΩ (VGS =-2.5V)
G
D
S
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±
12
Continuous Drain Current
Ta = 25℃
-4.2
Ta = 70℃
-3.5
Pulsed Drain Current
IDM
-30
Power Dissipation
Ta = 25℃
1.4
Ta = 70℃
1
Thermal Resistance.Junction- to-Ambient t ≤ 10s
90
Thermal Resistance.Junction- to-Ambient
125
Thermal Resistance.Junction- to-Case
RthJC
60
Junction Temperature
TJ
150
Junction and Storage Temperature Range
Tstg
-55 to 150
RthJA
ID
PD
W
V
℃
/W
A
℃
1
Rev:2023A2
SOT–23
1. GATE
2. SOURCE
3. DRAIN
FDV304P


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