FDN304P datasheet(1/5 Pages) EVVOSEMI

No. de pieza	FDN304P

Descripción Electrónicos	P-Channel MOSFET

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Fabricante Electrónico	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

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1

2

Gate

Source

Drain

3

FDN304P

P-Channel MOSFET

1

2

3

■

Simplified outline(SOT-23)

1. Gate

2. Source

3. Drain

■

Features

●

■

Applications

●

■

Absolute Maximum Ratings Ta = 25℃

1

–2.4 A, –20 V.

RDS(ON) = 0.052

Ω @ VGS = –4.5 V

RDS(ON) = 0.070

Ω @ VGS = –2.5 V

RDS(ON) = 0.100

Ω @ VGS = –1.8 V

Fast switching speed

High performance trench technology for extremely

low RDS(ON)

SuperSOT

TM -3 provides low RDS(ON) and 30% higher

power handling capability than SOT23 in the same

footprint

●

• Battery management

• Load switch

• Battery protection

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

–20

V

VGSS

Gate-Source Voltage

±8

V

ID

Drain Current – Continuous

(Note 1a)

–2.4

A

– Pulsed

–10

Maximum Power Dissipation

(Note 1a)

0.5

PD

(Note 1b)

0.46

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

250

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

75

°C/W

■

Thermal Characteristics

Rev:2022A2

Número de pieza similar - FDN304P

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Fairchild Semiconductor	FDN304P	384Kb / 8P	P-Channel 1.8V Specified PowerTrench MOSFET
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FDN304P Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

FDN304P Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

Número de pieza similar - FDN304P

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