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IXFP10N60P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFP10N60P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1200 eq IXFP10N60P N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) =740mΩ(Max)@VGS= 10V APPLICATIONS · Switching · DC-DC Converters Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ± 30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pulsed 25 A PD Total Dissipation @TC=25℃ 200 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(J-c) Thermal Resistance Junction-to-Case 0.62 ℃ /W 3 2 1 TO-220C Package |
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Descripción similar - IXFP10N60P |
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