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IRF7424TR Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

No. de pieza IRF7424TR
Descripción Electrónicos  P-Channel 30 V (D-S) MOSFET
PDF  9 Pages
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Fabricante Electrónico  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Página de inicio  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

IRF7424TR Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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Parameter
Max.
Units
VDS
Drain- Source Voltage
-30
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-11
ID @ TA= 70°C
Continuous Drain Current, VGS @ -10V
-9.3
A
IDM
Pulsed Drain Current

-47
PD @TA = 25°C
Power Dissipation
ƒ
2.5
PD @TA = 70°C
Power Dissipation
ƒ
1.6
Linear Derating Factor
20
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Description
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
50
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
VDSS
RDS(on) max (mW)
ID
-30V
13.5@VGS = -10V
-11A
22@VGS = -4.5V
-8.8A
Rev:2023A2
1
The SOP-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space.
The package is designed for
vapor phase, infrared, or wave soldering technique
s
P-Channel 30 V (D-S) MOSFET
IRF7424


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