Monolithic Pin Diode Switches w/Integrated Bias Network

MA4SW210B-1, MA4SW310B-1

V 3.00

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or information contained herein without notice. M/A-COM makes no warranty,

representation or guarantee regarding the suitability of its products for any

particular purpose, nor does M/A-COM assume any liability whatsoever arising out

of the use or application of any product(s) or information.

Visit www.macom.com for additional data sheets and product information.

3

Handling Considerations

Cleanliness

These chips should be handled in a clean environment. Do

not attempt to clean chips after installation.

Electro-Static Sensitivity

The MA4SW210B-1 and MA4SW310B-1 Series PIN

Diode Switches are ESD, Class 1 sensitive.

The proper

ESD handling procedures should be used.

Wire Bonding

Thermosonic wedge wire bonding using 0.003” x 0.00025”

ribbon or 0.001” diameter gold wire is recommended. A stage

temperature of 150

used. Ultrasonic energy should be adjusted to the minimum

required. RF bonds should be as short as possible.

Mounting

These chips have TiPtAu back metal.

They can be die

mounted with a gold-tin eutectic solder preform or

conductive epoxy. Mounting surface must be clean and flat.

Eutectic Die Attachment

An 80/20 gold-tin eutectic solder preform is recommended

with a work surface temperature of 255

temperature of 265

temperature should be 290

exposed to temperatures greater than 320

20 seconds. No more than three seconds should be required

for attachment.

Electrically Conductive Epoxy Die

Attachment

Assembly should be preheated to 125-150

amount of epoxy should be used, approximately 1 to 2 mils

thickness. A thin epoxy fillet should be visible around the

perimeter of the chip after placement. Cure epoxy per

manufacturer’s schedule time-temperature schedule.

Driver Connections MA4SW310B-1

Control Level (DC Current) at

Condition of

RF Output

Condition of

RF Output

J5

J6

J1 - J2

J1 - J3

-20 mA

+20 mA

Low Loss

Isolation

+20 mA

-20 mA

Isolation

Low Loss

Condition of

RF Output

J1 - J4

Isolation

Isolation

J7

+20 mA

+20 mA

+20 mA

+20 mA

-20 mA

Isolation

Isolation

Low Loss