Monolithic Pin Diode Switches w/Integrated Bias Network

MA4SW210B-1, MA4SW310B-1

V 3.00

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2

MA4SW210B-1 (SP2T)

Parameter

Frequency

Minimum

Nominal

Maximum

Units

Insertion Loss

6 GHz

0.60

1.0

dB

12 GHz

0.80

1.1

dB

18 GHz

1.25

2.25

dB

Isolation

6 GHz

47.5

51.4

dB

12 GHz

41.4

45.1

dB

18 GHz

36.2

40.4

dB

Input Return Loss

6 GHz

18.5

20.5

dB

12 GHz

12.9

18.2

dB

18 GHz

19.0

14.0

dB

Switching Speed

1

-

50.0

ns

MA4SW310B-1 (SP3T)

Parameter

Frequency

Minimum

Nominal

Maximum

Units

Insertion Loss

6 GHz

0.58

1.16

dB

12 GHz

0.76

1.38

dB

18 GHz

1.04

1.81

dB

Isolation

6 GHz

49.0

58.6

dB

12 GHz

41.4

48.5

dB

18 GHz

36.0

42.5

dB

Input Return Loss

6 GHz

16.3

19.9

dB

12 GHz

13.0

19.4

dB

18 GHz

10.9

17.3

dB

Switching Speed

1

-

50.0

ns

Operation of the MA4SW 210B-1

and 310B-1

Operation of the MA4SW210B-1 and MA4SW 310B-1 PIN

Switches is achieved by simultaneous application of DC

currents to the bias pads. The required levels for the

different states are shown in the tables below.

The control currents should be supplied by constant current

sources. The nominal 40

Ω - 60 Ω pull-up resistor voltage

@ J4 and J5 for –20 mA is usually -1V for +20 mA is

usually +1 V.

Driver Connections MA4SW210B-1

Control Level

(DC Current) at

Condition

of RF

Output

Condition

of RF

Output

J4

J5

J1 - J2

J1 - J3

-20 mA

+20 mA

Low Loss

Isolation

+20 mA

-20 mA

Isolation

Low Loss

1 Typical Switching Speed measured from 10% to 90% of detected RF signal driven by TTL compatible drivers using RC

Output Spiking Network, R = 50 – 200

Ω, C = 390 – 560 pF.