M29F800DB datasheet(1/53 Pages) STMICROELECTRONICS

No. de pieza	M29F800DB

Descripción Electrónicos	8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

PDF	53 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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1 / 53 page

August 2006

Rev 5

1/53

1

M29F800DT

M29F800DB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block)

5V Supply Flash Memory

Feature summary

■

Supply voltage

–VCC = 5V ±10% for Program, Erase and

Read

■

Access time: 55, 70, 90ns

■

Programming time

– 10µs per Byte/Word typical

■

19 Memory Blocks

– 1 Boot Block (Top or Bottom location)

– 2 Parameter and 16 Main Blocks

■

Program/Erase controller

– Embedded Byte/Word Program algorithms

■

Erase Suspend and Resume modes

– Read and Program another Block during

Erase Suspend

■

Unlock Bypass Program command

– Faster Production/batch Programming

■

Temporary Block Unprotection mode

■

Common Flash Interface

– 64 bit Security Code

■

Low power consumption

– Standby and Automatic Standby

■

100,000 Program/Erase cycles per Block

■

Electronic Signature

– Manufacturer Code: 0020h

– Top Device Code M29F800DT: 22ECh

– Bottom Device Code M29F800DB: 2258h

TSOP48 (N)

12 x 20mm

SO44 (M)

www.st.com

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Descripción similar - M29F800DB

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M29F800DB Datasheet(PDF) 1 Page - STMicroelectronics

M29F800DB Datasheet(HTML) 1 Page - STMicroelectronics

Número de pieza similar - M29F800DB

Descripción similar - M29F800DB

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