PJS6809 datasheet(1/6 Pages) PANJIT

No. de pieza	PJS6809

Descripción Electrónicos	30V P-Channel Enhancement Mode MOSFET

PDF	6 Pages

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Fabricante Electrónico	PANJIT [Pan Jit International Inc.]

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PJS6809

January 20,2022

PJS6809-REV.04

Page 1

30V P-Channel Enhancement Mode MOSFET

Voltage

-30 V

Current

-2.6A

SOT-23 6L

Unit : inch(mm)

Features

 RDS(ON) , VGS@-10V, ID@-2.6A<115m

Ω

 RDS(ON) , VGS@-4.5V, ID@-1.7A<150m

Ω

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case: SOT-23 6L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0005 ounces, 0.014 grams

 Marking: ST9

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

+20

V

Continuous Drain Current

ID

-2.6

A

Pulsed Drain Current

IDM

-10.4

A

Power Dissipation

Ta=25oC

PD

1.25

W

Derate above 25oC

10

mW/ oC

Operating Junction and Storage Temperature Range

TJ,TSTG

-55~150

oC

Typical Thermal Resistance

-

Junction to Ambient(Note 3)

RθJA

100

oC/W

Maximum Ratings and Thermal Characteristics (TA=25

o

C unless otherwise noted)

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