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ZXM64N03X Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZXM64N03X Datasheet(HTML) 2 Page - Zetex Semiconductors |
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2 / 7 page ![]() ZXM64N03X SEMICO NDUC TORS ISSUE 1 - OCTOBER 2005 2 THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 113 °C/W Junction to Ambient (b) RθJA 70 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 30 V Gate- Source Voltage VGS 20 V Continuous Drain Current (VGS=4.5V; TA=25°C)(b) (VGS=4.5V; TA=70°C)(b) ID 5.0 4.0 A Pulsed Drain Current (c) IDM 30 A Continuous Source Current (Body Diode)(b) IS 2.4 A Pulsed Source Current (Body Diode)(c) ISM 30 A Power Dissipation at TA=25°C(a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at TA=25°C(b) Linear Derating Factor PD 1.8 14.4 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C |
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