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ZXM64N03X Datasheet(PDF) 2 Page - Zetex Semiconductors

No. de pieza ZXM64N03X
Descripción Electrónicos  30V N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Fabricante Electrónico  ZETEX [Zetex Semiconductors]
Página de inicio  http://www.diodes.com/
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ZXM64N03X Datasheet(HTML) 2 Page - Zetex Semiconductors

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ZXM64N03X
SEMICO NDUC TORS
ISSUE 1 - OCTOBER 2005
2
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
RθJA
113
°C/W
Junction to Ambient (b)
RθJA
70
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
30
V
Gate- Source Voltage
VGS
20
V
Continuous Drain Current
(VGS=4.5V; TA=25°C)(b)
(VGS=4.5V; TA=70°C)(b)
ID
5.0
4.0
A
Pulsed Drain Current (c)
IDM
30
A
Continuous Source Current (Body Diode)(b)
IS
2.4
A
Pulsed Source Current (Body Diode)(c)
ISM
30
A
Power Dissipation at TA=25°C(a)
Linear Derating Factor
PD
1.1
8.8
W
mW/°C
Power Dissipation at TA=25°C(b)
Linear Derating Factor
PD
1.8
14.4
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C



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