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MSC080SMA120J Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza MSC080SMA120J
Descripción Electrónicos  SiC N-Channel MOSFET
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MSC080SMA120J Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISCFM8049
eq MSC080SMA120J
SiC N-Channel MOSFET
www.iscsemi.com
1
FEATURES
·
Low capacitances and low gate charge
·
RDS(ON)= 100mΩ（MAX）@VGS=20V TJ=25℃
·
Fast and reliable body diodee
·
Superior avalanche ruggedness
APPLICATIONS
·
Smart grid transmission and distribution
·
Induction heating and welding
·
Power supply and distribution
·
Motor drives
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
1200
V
VGSS
Gate-Source Opetation Voltage
-10/+23
V
ID
Drain Current-Continuous
37
A
Drain Current-Continuous@Tc=100℃
26
A
IDM
Drain Current-Single Pluse
91
A
PD
Total Dissipation @TC=25℃
200
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.75
℃
/W
D
G
S
S
SOT-227 package


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